Study of materials for protecting the output mirrors of semiconductor lasers based on AlGaAs/GaAs heterojunctions

摘要

The optical properties of thin films of zinc selenide, aluminum oxide, and silicon nitride obtained by electron-beam evaporation using ion assistance have been investigated. It is shown that the resulting zinc selenide films have high roughness and weak protective properties. By using reactive sputtering, silicon nitride films are obtained that increase the limiting power of lasers by a factor of 2.5. Using silicon nitride as an example, it is shown that the optical characteristics of the films can be controlled by varying the parameters of the sputtering process. It is shown that aluminum oxide films obtained with ion assistance increase the limiting power of laser diodes by a factor of 2 by comparison with similar films obtained with no ion assistance.