A fully integrated programmable dual-band RF filter based on electrically and mechanically coupled CMOS-MEMS resonators

摘要

In this paper, a novel fully integrated CMOS-MEMS filter implemented on a commercial CMOS technology is presented. The combination of mechanical and electrical coupling is used to enhance the response of the band pass filter. In particular, a 20 dB shape factor as low as 2 and a 35 dB stopband rejection are achieved. Moreover, the topology of the device allows obtaining a dual-bandpass filter behavior, presenting a tunable bandwidth and a deep notch between bands. Results show a dual-band filter with a 22 dB inner stopband rejection, center frequencies at 27.5 and 27.8 MHz, respectively, and a 0.6% relative bandwidth.