Model of the light-induced creation of two types of dangling bonds in a-Si : H

摘要

We present a new model of the light-induced creation of two types of dangling bonds in a-Si:H. The numerical calculation on the rate equation based on the model accounts for differences in the presence of two types of dangling bonds between high-quality samples and low-quality samples and also the observed kinetics of light-induced dangling bond densities in a-Si:H. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 16]