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Dynamics of photodarkening in amorphous As2Se3 films: In situ simultaneous measurements of optical transmittance and photocurrent

机译:非晶态As2Se3薄膜中光暗化的动力学:光学透射率和光电流的原位同时测量

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摘要

To understand the direct correlation between photodarkening (PD) and photoinduced defect creation (PDC) observed in amorphous chalcogenides, in situ simultaneous measurements of PD and photocurrent (PC) have been performed in amorphous As2Se3 films. The time-dependent PD and photocurrent during light excitations are empirically described by a stretched exponential function; exp[-(t/tau)(beta)], where tau is the effective response time and beta the dispersion parameter. The value of tau for the DC (bond breaking) is very much smaller than that for the PD. This suggests that there is no direct correlation between PD and bond breaking. These photoinduced effects induced by pulsed excitation are different from the CW excitation. These will be discussed in details.
机译:为了了解在非晶硫族化物中观察到的光暗化(PD)和光致缺陷产生(PDC)之间的直接相关性,已经在非晶As2Se3薄膜中进行了PD和光电流(PC)的原位同时测量。光激发过程中随时间变化的局部放电和光电流由扩展的指数函数根据经验进行描述。 exp [-(t / tau)β],其中tau是有效响应时间,β是分散参数。 DC(键断裂)的tau值比PD的tau值小得多。这表明PD和键断裂之间没有直接关系。脉冲激发引起的这些光诱导效应不同于连续波激发。这些将详细讨论。

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