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首页> 外文期刊>Journal of new materials for electrochemical systems >Influence of Copper Concentration on the Structural and Optical Properties of Chemically Deposited CuSbS2 Thin Films
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Influence of Copper Concentration on the Structural and Optical Properties of Chemically Deposited CuSbS2 Thin Films

机译:铜浓度对化学沉积CuSbS2薄膜结构和光学性能的影响

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Thin films of CuSbS2 have been deposited on ultrasonically cleaned glass substrates using a simple chemical bath deposition technique. Prepared films have been characterized using X-ray diffraction, Field Emission Scanning Electron Microscopy and UV-Vis-NIR spectroscopic techniques, respectively. X-ray diffraction analysis revealed that the prepared films possess polycrystalline in nature with orthorhombic CuSbS2 in addition to secondary phase of monoclinic Cu3SbS3 and cubic Cu12Sb4S13 for different copper concentrations. Field Emission Scanning Electron Spectroscopic analysis showed that the prepared films possess spherical shaped grains with irregular shaped clusters. Optical absorption analysis showed that the prepared films possess band gap value in the range between 1.7 and 2.4 eV.
机译:使用简单的化学浴沉积技术,将CuSbS2薄膜沉积在超声清洗过的玻璃基板上。分别使用X射线衍射,场发射扫描电子显微镜和UV-Vis-NIR光谱技术对制备的膜进行了表征。 X射线衍射分析表明,所制备的薄膜除具有单斜晶Cu3SbS3和立方晶Cu12Sb4S13的第二相外,还具有正交晶CuSbS2的多晶性质。场发射扫描电子光谱分析表明,所制备的薄膜具有球形颗粒和不规则形状的团簇。光吸收分析表明,所制备的膜的带隙值在1.7至2.4eV之间。

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