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首页> 外文期刊>Journal of new materials for electrochemical systems >Electrodeposition of CdSe Thin Films from Aqueous Solution
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Electrodeposition of CdSe Thin Films from Aqueous Solution

机译:水溶液中电沉积CdSe薄膜

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摘要

CdSe thin film was electrodeposited from an aqueous solution of CdSO_4 and H_2SeO_3 at 75°C on indium tin oxide (ITO)- covered glass substrates. The deposition films were characterized with X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by X-rays (EDAX), photoluminescence (PL) and UV spectrometry, respectively. XRD analysis shows that the films are exhibit in polycrystalline nature with hexagonal structure. The various mircrostructural parameters such as crystallite size, micro strain, dislocation density and texture coefficient were calculated. SEM study shows that the total substrate surface is well covered by uniformly distributed spherical shaped grains with stoichiometry compositions. Optical transmittance study shows the presence of direct transition with band gap energy 1.75 eV. A Photoluminescence spectrum of films was recorded and the results are discussed.
机译:在75℃下,从CdSO_4和H_2SeO_3的水溶液中将CdSe薄膜电沉积在氧化铟锡(ITO)覆盖的玻璃基板上。分别用X射线衍射(XRD),扫描电子显微镜(SEM),X射线(EDAX),光致发光(PL)和UV光谱法对沉积膜进行表征。 XRD分析表明该膜具有六方结构的多晶性质。计算了各种微结构参数,如微晶尺寸,微应变,位错密度和织构系数。 SEM研究表明,整个基底表面被具有化学计量组成的均匀分布的球形晶粒很好地覆盖。光学透射率研究表明存在带隙能量为1.75 eV的直接跃迁。记录薄膜的光致发光光谱并讨论结果。

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