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首页> 外文期刊>Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology >Synthesis and structure of mixed isopropoxide-beta-ketoester and beta-ketoamide zirconium complexes: Potential precursors for MOCVD of ZrO2
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Synthesis and structure of mixed isopropoxide-beta-ketoester and beta-ketoamide zirconium complexes: Potential precursors for MOCVD of ZrO2

机译:异丙醇-β-酮酸酯和β-酮酰胺混合锆配合物的合成与结构:ZrO2 MOCVD的潜在前体

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The reaction of [Zr(OPri)(4)-(HOPri)] with beta-ketoester and beta-ketoamide resulted in complexes having potential to serve as precursors for MOCVD of ZrO2 thin films. Zirconium bis(isopropoxide) bis(tert-butylacetoacetate) (1), zirconium tris(isopropoxide)(tert-butylacetoacetate) (2), zirconium tetrakis(tert-butylacetoacetate) (3) and zirconium bis(isopropoxide) bis(N,N-diethylacetoacetamide) (4) were synthesised and characterised by elemental analysis, NMR, IR and mass spectrometry. The molecular structure of the compounds as determined by single crystal X-ray diffraction revealed that compounds 1 and 4 exist as monomers while compound 2 exhibits a nearly symmetric dimeric structure. It is shown that by introducing small changes in the established key structures of the existing precursors, it is possible to tune the thermal properties. Compounds 1, 2 and 4 melt at low temperatures and possess thermal properties that are promising for MOCVD of ZrO2 and related oxide thin films. ZrO2 films grown using compound 1 as precursor in the absence of additional oxidant were characterised by X-ray powder diffraction, scanning electron microscopy and Rutherford back-scattering analysis. [References: 46]
机译:[Zr(OPri)(4)-(HOPri)]与β-酮酸酯和β-酮酰胺的反应导致形成具有用作ZrO2薄膜MOCVD前体的复合物。双(异丙氧基)双(乙酰乙酸叔丁酯)锆(1),三(异丙氧基)(叔乙酰乙酸叔丁酯)锆(2),四(叔乙酸乙酰丁酯)锆(3)和双(异丙氧基)叔丁酸锆双(N,N) -二乙基乙酰乙酰胺)(4)的合成并通过元素分析,NMR,IR和质谱进行表征。通过单晶X射线衍射测定的化合物的分子结构表明,化合物1和4以单体形式存在,而化合物2显示出几乎对称的二聚结构。结果表明,通过在现有前体的已建立键结构中引入小的变化,可以调节热性能。化合物1、2和4在低温下熔化,并具有热性质,有望对ZrO2和相关氧化物薄膜进行MOCVD。通过X射线粉末衍射,扫描电子显微镜和卢瑟福背散射分析,对在不存在其他氧化剂的情况下使用化合物1作为前体生长的ZrO2薄膜进行了表征。 [参考:46]

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