首页> 外文期刊>Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology >Novel tellurium containing fulvalene-type electron donors, triselenatellurafulvalene (TSTeF) and diselenaditellurafulvalene (DSDTeF); synthesis, conductivities and crystal structures of their TCNQ complexes
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Novel tellurium containing fulvalene-type electron donors, triselenatellurafulvalene (TSTeF) and diselenaditellurafulvalene (DSDTeF); synthesis, conductivities and crystal structures of their TCNQ complexes

机译:新型的含有富富烯型电子供体的碲,三硒富拉富烯烯(TSTeF)和二硒二富拉富烯烯(DSDTeF); TCNQ配合物的合成,电导率和晶体结构

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Novel tellurium containing fulvalene-type electron donors, triselenatellurafulvalene (TSTeF) and diselenaditellurafulvalene (DSDTeF) are synthesized by an efficient two- or three-stage procedure. They behave as superior electron donors to give highly conductive charge-transfer (CT) complexes with TCNQ. TSTeF-TCNQ shows a high conductivity of 2000 S cm(-1) at room temperature and is metallic down to 85 K, where a metal-insulator (MI) transition takes place. In contrast, the conductivity of DSDTeF-TCNQ is 1400 S cm(-1) at room temperature and monotonously increases down to 4.2 K without any MI transition. An X-ray structural analysis shows that TSTeF-TCNQ is crystallographically isostructural with TTF-TCNQ comprising typical one-dimensional donor and acceptor columns. On the other hand, the crystal structure of DSDTeF-TCNQ is characterized by quasi one-dimensional donor stacks with side-by-side intercolumnar interactions through Te-Se contacts, which stabilize the metallic state at low temperature. [References: 23]
机译:通过高效的两步或三步合成方法,合成了新型的含有富勒烯型电子供体的碲,富硒烯富勒烯三烯(TSTeF)和硒代富勒烯富烯二烯(DSDTeF)。它们表现为优异的电子供体,可与TCNQ形成高度导电的电荷转移(CT)复合物。 TSTeF-TCNQ在室温下显示出2000 S cm(-1)的高电导率,并且在低至85 K的情况下为金属,其中发生了金属-绝缘体(MI)过渡。相比之下,DSDTeF-TCNQ的电导率在室温下为1400 S cm(-1),单调增加至4.2 K,而没有任何MI跃迁。 X射线结构分析表明,TSTeF-TCNQ与包括典型的一维供体和受体柱的TTF-TCNQ在晶体学上是同构的。另一方面,DSDTeF-TCNQ的晶体结构的特征是准一维施主堆叠,通过Te-Se接触具有并列的柱间相互作用,从而稳定了低温下的金属态。 [参考:23]

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