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Synthesis of self-ordered Sb2Te2 films with atomically aligned Te layers and the effect of phonon scattering modulation

机译:具有原子排列的Te层的自序Sb2Te2薄膜的合成和声子散射调制的影响

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摘要

In this work, we prepared multilayered films with repeated Sb and Te layers by a thermal evaporation method. The film structure was controlled by the layer thickness ratio of Sb to Te, resulting in the formation of self-ordered superlattice structured Sb2Te2/Te films and self-ordered Sb2Te3 films. The thermoelectrical properties and the thermoelectric figure of merit (ZT) closely correlated with the structural characteristics, i.e., the superlattice structure with semiconductor-semimetal layers contributed to both electron and phonon scattering resulting in an improvement in electrical conduction and an increase in phonon scattering. In particular, phonon scattering was significantly increased to further reduce thermal conductivity in the self-ordered superlattice structure of the {Sb2Te2/Te}_(n) sample. As a result, a thermoelectric figure of merit of ZT = 1.43 was obtained at 400 K for {Sb(4)Te(6)}_(n), indicating that the self-ordered superlattice structure holds great promise as an alternative layered thin film thermoelectric material.
机译:在这项工作中,我们通过热蒸发方法制备了具有重复的Sb和Te层的多层膜。通过Sb与Te的层厚比来控制膜结构,从而形成自定序的超晶格结构的Sb2Te2 / Te膜和自定序的Sb2Te3膜。热电性能和热电性能因数(ZT)与结构特征密切相关,即具有半导体半金属层的超晶格结构有助于电子和声子散射,从而改善了导电性并增加了声子散射。特别是,声子散射显着增加,以进一步降低{Sb2Te2 / Te} _(n)样品的自序超晶格结构中的热导率。结果,对于{Sb(4)Te(6)} _(n),在400 K时获得了ZT = 1.43的热电品质因数,表明自排序超晶格结构作为替代的分层薄层具有广阔的前景薄膜热电材料。

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