On Prognosis of Technological Process to Optimize Manufacturing of an Invertors to Increase Density Their of Elements

摘要

In this paper we analyzed possibility to increase density of elements in circuit of an inverter based on field-effect heterotransistors. We introduce an approach to increase density of the considered elements. The approach based on manufacture a heterostructure with specific configuration, doping of required areas of the heterostructure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects. We compare manufacturing of these transistors, manufactured by diffusion and ion implantation.