Intercalated Nanostructure Consisting of Inorganic Receptor and Organic Ambipolar Semiconductor

摘要

The results of an impedance spectroscopy and current-voltage (I-V) characteristics measured in the dark and under illumination of the intercalated multilayer nanostructure of the type of a layered inorganic semiconductor GaSe/ambipolar organic semiconductor 1,7-bis(9-ethyl-3-carbazolyl) N,N'-2-ethyl hexyl perylene bisimide (BCEHPB) are presented. It is shown that the I-V characteristic of GaSe(BCEHPB) nanostructure changes from linear, in the case of parallel contacts to C axis, to strongly rectifying in the case of perpendicular contacts. The tangent of the angle of electrical losses along to the nanostructure layers decreases almost twice after intercalation and shows the oscillation property in the high frequency range. It is suggested that such oscillation represent mini-band character of the, localized states bands formed by modulating potential of BCEHPB nanolayers.