Influence of Intense Electric Field on the Carrier Contribution to the Elastic Constants in III-V and Optoelectronic Materials: Simplified Theory, Relative Comparison and the Suggestion for Experimental Determination

摘要

In this paper we study the influence of intense electric field on the carrier contribution to the elastic constants in III-V, ternary and quaternary materials on the basis of a newly formulated electron dispersion law. It is found, taking InAs, InSb, Hg_(1-x)Cd_xTe and In_(1-x)Ga_xAs_yP_(1-y) lattice matched to InP as examples that the second and third order elastic constants increase with decreasing electron concentration and alloy composition respectively. Both the elastic constants become more or less constant with increasing in electric field up to certain value of the external electric field depending on the constants of the energy band structure of a particular material and decreases with increase in electric field reflecting the nature of the density-of-states function in this context. We have suggested an experimental method of determining the electronic contribution to the elastic constants in compounds having arbitrary dispersion laws. Besides, the well-known expressions for the bulk specimens of wide gap materials have also been obtained as a special case of our generalized analysis under certain limiting conditions which confirms the compatibility test and the content of this paper finds three applications in the field of advanced materials.