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首页> 外文期刊>Journal of nanoscience and nanotechnology >Transmission Electron Microscope Observation of Interface Structures of Graphene on 6H-SiC
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Transmission Electron Microscope Observation of Interface Structures of Graphene on 6H-SiC

机译:6H-SiC上石墨烯界面结构的透射电镜观察

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High-resolution transmission electron microscopic cross-sectional observations of graphene-on-SiC(0001) were carried out to directly observe the interface structure. A first principles calculation allowed us to understand the interface structures and their electronic states. Our observations revealed a metastable transitional interface structure formed by decomposition of a single SiC bilayer as well as complete honeycomb graphene formed by the decomposition of three SiC bilayers. The calculations further showed that the differences in the interface structures should strongly influence the electronic states, producing either metallic or semiconducting behavior. These results may help to resolve the controversy over the electronic states of graphene-on-SiC, and promote more accurate band-gap engineering via surface decomposition.
机译:进行了石墨烯-SiC(0001)的高分辨率透射电子显微镜横截面观察,以直接观察界面结构。第一个原理计算使我们能够了解界面结构及其电子状态。我们的观察揭示了由单个SiC双层分解形成的亚稳态过渡界面结构,以及由三个SiC双层分解形成的完整蜂窝石墨烯。计算进一步表明,界面结构的差异应强烈影响电子态,从而产生金属或半导体行为。这些结果可能有助于解决关于石墨烯在SiC上的电子状态的争议,并通过表面分解促进更精确的带隙工程。

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