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Nitridation of whisker-reinforced reaction bonded silicon nitride ceramics

机译:晶须增强反应结合氮化硅陶瓷的氮化

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Ceramic matrix composites were fabricated from silicon carbide whisker-reinforced reaction bonded silicon nitride. Optimal dispersion of the SiC whiskers in the silicon powder slip was achieved by milling and pH control; a pH range of 4-5 giving the best results. Only a slight drop in green density was observed for a 30 wt% addition of SiC whiskers. The effects of the whisker additions on the nitridation kinetics of reaction bonding were investigated and the additions were found to increase the induction period before nitridation and to slightly decrease the nitridation rate but green density and temperature were still found to be the main factors controlling nitridation. Modulus of Rupture measurements for the composites showed a decrease in strength compared to the monolithic material.
机译:陶瓷基复合材料由碳化硅晶须增强的反应结合氮化硅制成。 SiC晶须在硅粉浆中的最佳分散是通过研磨和pH控制来实现的。 pH范围为4-5可获得最佳效果。对于30wt%的SiC晶须,仅观察到绿色密度的略微下降。研究了晶须添加对反应键合氮化动力学的影响,发现添加晶须增加了氮化之前的诱导时间,并稍微降低了氮化速率,但仍发现生坯密度和温度是控制氮化的主要因素。与整体材料相比,复合材料的断裂模量显示出强度降低。

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