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Theoretical study of the formation of deformation twins in GaAs crystals grown by the vertical gradient freeze method

机译:垂直梯度冻结法生长GaAs晶体中形变孪晶形成的理论研究

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摘要

The objective of this paper is to predict the twin formation in the Gallium Arsenide (GaAs) crystals grown by vertical gradient freeze (VGF) method at different growth parameters. The deformation twins are formed in the GaAs crystal during its growth processes from the melt. The thermal stresses generated by the temperature profile during the crystal growth can be the primary cause of deformation twin formation. Temperature gradients are depend on the geometrical and physical crystal growth parameters, such as crystal diameter and imposed temperature gradients on the surface of the solidifying crystal in VGF. A quantitative thermal stress model is developed here for predicting the twin formation in GaAs grown by VGF at different growth parameters. This investigation is expected to further the understanding of twin formation. This understanding will provide valuable information to crystal growers to study the influence of growth parameters on twin formation for growing low defect GaAs crystal. (C) 2001 Kluwer Academic Publishers. [References: 19]
机译:本文的目的是预测在不同的生长参数下通过垂直梯度冷冻(VGF)方法生长的砷化镓(GaAs)晶体中的孪晶形成。 GaAs晶体在生长过程中由熔体形成变形孪晶。晶体生长过程中温度分布所产生的热应力可能是形变孪晶形成的主要原因。温度梯度取决于几何和物理晶体生长参数,例如晶体直径和VGF中凝固晶体表面施加的温度梯度。在此建立定量热应力模型,以预测在不同生长参数下由VGF生长的GaAs中的孪晶形成。该研究有望进一步了解双胞胎的形成。这种理解将为晶体生长者提供有价值的信息,以研究生长参数对生长低缺陷GaAs晶体的孪晶形成的影响。 (C)2001 Kluwer学术出版社。 [参考:19]

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