首页> 外文期刊>Journal of geophysical research. Solid earth: JGR >Three-dimensional lithospheric electrical structure of Southern Granulite Terrain, India and its tectonic implications
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Three-dimensional lithospheric electrical structure of Southern Granulite Terrain, India and its tectonic implications

机译:印度南部花岗石地形的三维岩石圈电结构及其构造意义

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[1] The crustal as well as the upper mantle lithospheric electrical structure of the Southern Granulite Terrain (SGT) is evaluated, using the magnetotelluric (MT) data from two parallel traverses: one is an ~ 500 km long N-S trending traverse across SGT and another a 200 km long traverse. Data space Occam 3-D inversion was used to invert the MT data. The electrical characterization of lithospheric structure in SGT shows basically a highly resistive (several thousands of Ohm meters) upper crustal layer overlying a moderately resistive (a few hundred Ohm meters) lower crustal layer which in turn is underlain by the upper mantle lithosphere whose resistivity shows significant changes along the traverse. The highly resistive upper crustal layer is interspersed with four major conductive features with three of them cutting across the crustal column, bringing out a well-defined crustal block structure in SGT with individual highly resistive blocks showing correspondence to the geologically demarcated Salem, Madurai, and Trivandrum blocks. The 3-D model also brought out a well-defined major crustal conductor located in the northern half of the Madurai block. The electrical characteristics of this south dipping conductor and its close spatial correlation with two of the major structural elements, viz., Karur-Oddanchatram-Kodaikanal Shear Zone and Karur-Kamban-Painavu-Trichur Shear Zone, suggest that this conductive feature is closely linked to the subduction-collision tectonic processes in the SGT, and it is inferred that the Archean Dharwar cratoneoproterozoic SGT terrain boundary lies south of the Palghat-Cauvery shear zone. The results also showed that the Achankovil shear zone is characterized by a well-defined north dipping conductive feature. The resistive block adjoining this conductor on the southern side, representing the Trivandrum block, is shown to be downthrown along this north dipping crustal conductor relative to the Madurai block, suggesting a northward movement of Trivandrum block colliding against the Madurai block. The lithospheric upper mantle electrical structure of the SGT up to a depth of 100 km may be broadly divided into two distinctly different segments, viz., northern and southern segments. The northern lithospheric segment, over a major part, is characterized by a thick resistive upper mantle, while the southern one is characterized by a dominantly conductive medium suggesting a relatively thinned lithosphere in the southern segment.
机译:[1]使用来自两个平行导线的大地电磁(MT)数据,对南部花岗岩地区(SGT)的地壳和上地幔岩石圈电结构进行了评估:一个是横跨SGT的〜500 km长的NS趋势导线。另一条长200公里的导线。数据空间Occam 3-D反转用于反转MT数据。 SGT中岩石圈结构的电学特征基本上显示了一个高电阻(几千欧姆米)的上地壳层,覆盖在一个中等电阻(几百欧姆米)的下地壳层上,而该层又被上地幔岩石层所覆盖,其电阻率显示出沿导线的重要变化。高电阻的上地壳层散布着四个主要的导电特征,其中三个横穿了地壳柱,从而在SGT中产生了定义明确的地壳块结构,其中各个高电阻块与地质上已划定的塞勒姆,马杜赖和Trivandrum块。 3-D模型还带出了位于马杜赖区块北半部的定义明确的主要地壳导体。该南浸导体的电学特性及其与两个主要结构元素(即Karur-Oddanchatram-Kodaikanal剪切带和Karur-Kamban-Painavu-Trichur剪切带)的紧密空间相关性表明该导电特性紧密相关根据SGT的俯冲-碰撞构造过程,推断出太古宙Dharwar克拉通/新生代SGT的地形边界位于Palghat-Cauvery剪切带的南部。结果还表明,Achankovil剪切带具有明确定义的北浸导电特征。在南侧,代表特里凡得琅(Tvanudrum)区块的该导体附近的电阻块显示为沿该北倾地壳导体相对于马杜赖(Madurai)区块被下推,表明特里凡得琅(Trivandrum)区块向北移动,与马杜赖(Madurai)区块相撞。高达100 km深度的SGT的岩石圈上地幔电结构可以大致分为两个截然不同的部分,即北部和南部部分。北部岩石圈部分的大部分区域以厚的电阻性上地幔为特征,而南部岩石圈的部分则以占主导地位的导电介质为特征,这表明南部岩石层相对较薄。

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