Slow Positron Annihilation in Ion-Implanted Silicon

摘要

The mechanism of slow positron annihilation in ion-implanted Si has been discussed in terms of the Diffusion-Trapping model (DTM). The trapping of positron has been considered in native vacancies (monovacancies) and ion induced vacancies i.e. vacancy clusters. The model has been used to calculate the Doppler broadening line shape parameter (S-parameter) as a function of incident positron energy for different ion-implanted Si. It has been found that at lower energies the monovacancies and vacancy clusters both contribute to the S-parameter while, with the increase in positron energy the vacancy clusters are reduced. The S-parameter is found to be dependent on the fluency of the implanted ions.