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首页> 外文期刊>Journal of Electronic Materials >Thermoelectric Properties of Indium-Selenium Nanocomposites Prepared by Mechanical Alloying and Spark Plasma Sintering
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Thermoelectric Properties of Indium-Selenium Nanocomposites Prepared by Mechanical Alloying and Spark Plasma Sintering

机译:机械合金化和火花等离子体烧结制备的铟硒纳米复合材料的热电性能

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摘要

Indium-selenium-based compounds have received much attention as thermoelectric materials since a high thermoelectric figure of merit of 1.48 at 705 K was observed in In_(4)Se_(2.35). In this study, four different compositions of indium-selenium compounds, In_(2)Se_(3), InSe, In_(4)Se_(3), and In_(4)Se_(2.35), were prepared by mechanical alloying followed by spark plasma sintering. Their thermoelectric properties such as electrical resistivity, Seebeck coefficient, and thermal conductivity were measured in the temperature range of 300 K to 673 K. All the In-Se compounds comprised nanoscaled structures and exhibited n-type conductivity with Seebeck coefficients ranging from -159 (mu)V K~(-1) to -568 (mu)V K~(-1) at room temperature.
机译:铟硒基化合物作为热电材料备受关注,因为在In_(4)Se_(2.35)中观察到在705 K处的1.48高热电品质因数。在这项研究中,通过机械合金化随后制备四种不同组成的铟硒化合物In_(2)Se_(3),InSe,In_(4)Se_(3)和In_(4)Se_(2.35)。火花等离子体烧结。在300 K至673 K的温度范围内测量了它们的热电特性,如电阻率,塞贝克系数和热导率。所有In-Se化合物均包含纳米级结构,并表现出n型电导率,塞贝克系数为-159(室温下的μVK〜(-1)至-568μVK〜(-1)。

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