首页> 外文期刊>Journal of Electronic Materials >Thermal Expansion of n-Type Doped Bi_(2)Te_(2.88)Se_(0.12) and p-Type Doped Bi_(0.52)Sb_(1.48)Te_(3) Solid Solutions from -60 deg C to +60 deg C
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Thermal Expansion of n-Type Doped Bi_(2)Te_(2.88)Se_(0.12) and p-Type Doped Bi_(0.52)Sb_(1.48)Te_(3) Solid Solutions from -60 deg C to +60 deg C

机译:n型掺杂Bi_(2)Te_(2.88)Se_(0.12)和p型掺杂Bi_(0.52)Sb_(1.48)Te_(3)固溶体的热膨胀从-60摄氏度到+60摄氏度

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摘要

An automated dilatometric system was developed to measure the thermal expansion of solid materials from -60 deg C to +400 deg C. This system was then applied to measure the linear thermal expansions of n-type doped Bi_(2)Te_(2.88)Se_(0.12) and p-type doped Bi_(0.52)Sb_(1.48)Te_(3) solid solutions along the a-axis from -60 deg C to +60 deg C. The experiments were performed using a vertical "tube/push rod" dilatometer under constant-temperature conditions. The initial alloys were synthesized from Bi, Te, and Se or Sb (each at 99.999 mass(percent) purity) in stoichiometric ratios. The method based on the correlation between the thermal expansion and the heat capacity was proposed to calculate the axial expansion coefficients along the c-axis.
机译:开发了一种自动膨胀测量系统来测量固体材料从-60摄氏度到+400摄氏度的热膨胀。然后将该系统应用于测量n型掺杂Bi_(2)Te_(2.88)Se_的线性热膨胀。沿a轴从-60℃到+60℃注入(0.12)和p型掺杂的Bi_(0.52)Sb_(1.48)Te_(3)固溶体。使用垂直的“管/推杆”进行实验恒温条件下的膨胀计。初始合金是按化学计量比由Bi,Te和Se或Sb(纯度均为99.999质量%)合成的。提出了一种基于热膨胀与热容之间相关性的方法来计算沿c轴的轴向膨胀系数。

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