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首页> 外文期刊>Journal of Electronic Materials >Preparation of Copper Telluride Films by Co-Reduction of Cu(I) and Te(IV) Ions in Choline Chloride: Ethylene Glycol Ionic Liquid
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Preparation of Copper Telluride Films by Co-Reduction of Cu(I) and Te(IV) Ions in Choline Chloride: Ethylene Glycol Ionic Liquid

机译:通过在氯化胆碱:乙二醇离子液体中共还原Cu(I)和Te(IV)离子制备碲化铜薄膜

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摘要

Cathodic processes of direct co-reduction of Cu+ and Te4+ ions on Pt electrode at 60A degrees C were investigated using cyclic voltammetry and electrochemical impedance spectroscopy techniques. The ionic liquid as background electrolyte consisted of a mixture of choline chloride and ethylene glycol (ChCl-EG 1:2 mol ratio) in which 5-20 mM CuCl and 8 mM TeO2 were dissolved. The voltammograms exhibited the following successive cathodic processes: Cu2+/Cu+ reduction, Te underpotential deposition, simultaneous deposition of Cu metal and CuTe compound, and deposition of Te-rich CuTe compound at the most negative potentials (from -0.5 V to -0.8 V). Corresponding dissolution or oxidation peaks were recorded on the anodic branch. The voltammetric results were confirmed by electrochemical impedance spectra. Copper telluride films have been synthesized on platinum substrate via potentiostatic electrodeposition at 60A degrees C. It was found from atomic force microscopy that CuTe film samples prepared from ChCl-EG + 5 mM CuCl + 8 mM TeO2 ionic liquid have high growth rates. The x-ray diffraction patterns of the deposited films from ChCl-EG + 10 mM CuCl + 8 mM TeO2 ionic liquid indicated the presence of a Cu2Te phase for film deposited at -0.7 V and a Cu0.656Te0.344 phase for film deposited at -0.6 V.
机译:利用循环伏安法和电化学阻抗谱技术研究了60A时Pt电极上Cu +和Te4 +离子直接共还原的阴极过程。作为背景电解质的离子液体由氯化胆碱和乙二醇(ChCl-EG 1:2摩尔比)的混合物组成,其中溶解了5-20 mM CuCl和8 mM TeO2。伏安图显示了以下连续的阴极过程:Cu2 + / Cu +还原,Te欠电势沉积,Cu金属和CuTe化合物的同时沉积以及富含Te的CuTe化合物在最大负电势(-0.5 V至-0.8 V)下的沉积。在阳极分支上记录了相应的溶解或氧化峰。伏安法结果由电化学阻抗谱证实。通过在60A的恒电位电沉积法在铂基板上合成碲化铜膜。从原子力显微镜发现,由ChCl-EG + 5 mM CuCl + 8 mM TeO2离子液体制备的CuTe膜样品具有高生长速率。来自ChCl-EG + 10 mM CuCl + 8 mM TeO2离子液体的沉积膜的X射线衍射图表明,存在于-0.7 V沉积的膜存在Cu2Te相,对于在-0.7 V沉积的膜存在Cu0.656Te0.344相。 -0.6V。

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