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Electrodeposition method for controlled formation of CdS films from aqueous solutions

机译:电沉积法控制水溶液中CdS薄膜的形成

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摘要

Polycrystalline CdS films of good quality could be obtained by electrolysis with rectangular voltages on indium tin oxide/glass substrates from low concentration of CdSO_4 and Na_2S_2O_3 in aqueous solution system of pH 3.1 at room temperature (r.t.). The films obtained during 6 s at -1.0 V (versus Ag|AgCl|3 M NaCl) and 6 s at 0.0 V gave stoichiometric CdS with a hexagonal polycrystalline structure with a preferred a-axis orientation. It is suggested that the mass transfer of Cd~(2+) to the substrate surface governs the deposition rate of CdS. The film deposited at 6 s of -1.2 V and 6 s of 0.0 V gave a c-axis preferred orientation. Incorporation of S into the films was affected by the applied potential, and the reduction of S controls the deposition reaction.
机译:在室温(r.t.)的pH 3.1水溶液系统中,通过低浓度的CdSO_4和Na_2S_2O_3在低浓度的CdSO_4和Na_2S_2O_3上用矩形电压在铟锡氧化物/玻璃基板上进行电解,可以获得高质量的多晶CdS膜。在-1.0 V的6 s内(相对于Ag | AgCl | 3 M NaCl)和在0.0 V的6 s内获得的薄膜得到具有理想a轴取向的六方多晶结构的化学计量CdS。提示Cd〜(2+)向基体表面的传质决定了CdS的沉积速率。以-1.2 V的6 s和0.0 V的6 s沉积的薄膜给出了c轴的最佳取向。薄膜中S的掺入受施加电势的影响,S的减少控制了沉积反应。

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