Auger-type excitation and de-excitation processes in rare earth and transition metal doped semiconductors

摘要

Processes of indirect excitation of rare earth andtransition metal ions are reviewed. We describe Auger-typeprocesses, in which one of the interacting centres is ionised. Weshow that such Auger-type processes are often very efficient andresult in indirect excitation of rare earth (transition metal) emission.