Fabrication of high purity Ti_3SiC_2 from Ti/Si/C with the aids of Al by spark plasma sintering

摘要

Ti/Si/C powders were used to fabricate high purity Ti_3SiC_2 with the aids of Al by spark plasma sintering (SPS). The results showed that the dense ;Ti_3SiC_2 samples with < 2 wt. percent TiC could be rapidly synthesized from Ti/Si/C/Al mixtures at 1280 deg C for 6-36 min. The sintering temperature and the sintering time was lower and shorter than that by hot isostatic pressing (HIP) or hot pressing (HP) from Ti/Si/C mixtures. The microstructures of Ti_3SiC_2 depend on the sintering temperature and holding times of SPS and can be controlled accordingly. The technological implication of this work is that, with the aids of Al, Ti/Si/C can be suggested to be the powder mixture to synthesize high purity Ti_3SiC_2 in addition to Ti/Si/TiC powder mixture.