Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si

摘要

The size of oxygen precipitates (OP) and the strainat the OP/matrix interface as a function of enhanced pressureduring annealing of Cz-Si were investigated. High pressuretreatments led to an increase in the strain at the OP/matrixinterface in comparison with the effect of annealing at atmosphericpressure. This high strain is suggested to be caused by accelerationof the gettering process at enhanced pressure.