SPECTRAL SENSITIVITY OF A DIFFERENTIAL PHOTODIODE IN A BIPOLAR INTEGRATED CIRCUIT

摘要

We consider the spectral characteristics of an integrated differential photodiode in a bipolar integrated circuit for which the depth of the photosensitive region is limited by the depth at which the buried layer is located in the substrate, while one of the p-n junctions is covered with a standard filter blocking visible radiation. We show that it can be used as a light intensity sensor.