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A SURFACE POTENTIAL INVESTIGATION ON TRAP CREATION IN AN ORGANIC DIELECTRIC

机译:有机电介质中陷阱形成的表面势调查

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摘要

In view of the characteristics of space charge positions in an organic insulation dielectric under high electrical field, a surface potential model was put forward to investigate the dynamics of charge carrier capture. By the suggested comparative experimental method, trap creation under high field was expressed in the increment of surface potential. It is shown that the structural degradation is proportional to the time of the field application and to the exponential of the inverse of the field. Such a result was also verified by photoconductive current research. Taking a certain extent of trap creation as the critical condition of electrical breakdown, a widely used empirical formula about electrical aging was finally deduced. (C) 1996 John Wiley & Sons, Inc. [References: 20]
机译:针对高电场下有机绝缘电介质中空间电荷位置的特点,提出了一种表面电势模型来研究载流子俘获的动力学。通过建议的比较实验方法,在高场下陷阱的形成以表面电位的增量表示。结果表明,结构退化与施加电场的时间成正比,与电场倒数的指数成正比。光电导电流研究也证实了这一结果。以一定程度的陷阱产生作为电击穿的临界条件,最终推导了广泛使用的关于电老化的经验公式。 (C)1996 John Wiley&Sons,Inc. [参考:20]

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