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首页> 外文期刊>JETP Letters >Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas
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Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas

机译:基于具有高浓度二维电子气的GaAs量子阱的弹道环形干涉仪的磁输运性质

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摘要

Magnetotransport properties of ballistic ring interferometers made on the basis of 2D electron gas in a GaAs quantum well with AlAs/GaAs superlattice barriers are studied. An asymmetry of magnetoresistance and a phase reversal in h/e oscillations are observed when the bias voltage across the ring exceeds kT/e. (C) 2000 MAIK "Nauka/ Interperiodica". [References: 21]
机译:研究了在具有AlAs / GaAs超晶格势垒的GaAs量子阱中基于二维电子气制造的弹道环形干涉仪的磁传输特性。当环上的偏置电压超过kT / e时,在h / e振荡中观察到磁阻的不对称性和相位反转。 (C)2000 MAIK“ Nauka / Interperiodica”。 [参考:21]

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