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A novel fabrication approach for carbon nanotube lateral field emission devices

机译:碳纳米管横向场发射器件的新型制造方法

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摘要

A novel fabrication approach for growing carbon nanotubes (CNTs) laterally and selectively on the tip region of lateral micro-fingers with built-in metallic anode utilizing a single-mask microfabrication process is presented. The selective growth of the CNTs was achieved with a two-step microwave plasma-enhanced chemical vapor deposition process involving a pre-growth hydrogen plasma treatment. Without plasma pretreatment, CNTs were found to grow along edges of the sandwiched tri-metal layer including the anode. Interestingly, with plasma pretreatment, CNTs grew selectively near the sharp tip region. Moreover, specific CNTs could be selectively synthesized on the tip region by optimizing the plasma pretreatment and the growth time. In essence, a lateral field emission device having CNT emitters with integrated metallic anode can be fabricated in just a single-mask microfabrication process. This approach can enhance the feasibility of integrating CNTs into vacuum integrated circuits.
机译:提出了一种利用单掩模微细加工工艺在具有内置金属阳极的横向微指的尖端区域上横向和选择性生长碳纳米管(CNT)的新颖制造方法。通过两步微波等离子体增强化学气相沉积工艺(包括预生长氢等离子体处理)实现了CNT的选择性生长。在不进行等离子体预处理的情况下,发现碳纳米管沿着夹层三金属层(包括阳极)的边缘生长。有趣的是,通过等离子体预处理,CNT在尖锐的尖端区域附近选择性生长。此外,通过优化等离子体预处理和生长时间,可以选择性地在尖端区域上合成特定的CNT。本质上,具有CNT发射器和集成金属阳极的横向场发射器件可以仅通过单掩膜微制造工艺来制造。这种方法可以增强将CNT集成到真空集成电路中的可行性。

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