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Cathodoluminescence of the a-C:N films deposited by a filtered cathodic arc plasma system

机译:阴极阴极电弧等离子体系统沉积的a-C:N薄膜的阴极发光

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Amorphous carbon nitride (a-C:N) films were successfully synthesized on silicon using a 90 deg-bend magnetic filtered cathodic arc plasma (FCAP) system. ESC A analysis demonstrated that the N/C ratios reached 1.08. Many investigations on photoluminescence (PL) spectra of diamondlike carbon firms have been performed, but cathodoluminescence (CL) spectra have seldom been discussed. This work investigated a-C:N films using the CL spectra at 300 K. This work presents CL spectra of a-C:N films obtained at 1.5-3.5 eV and verifies luminescence from the a-C:N films in the visible region. The most prominent luminescence in the CL spectra from the a-C:N films has two peaks centered approx 2.67 eV (blue light) and -1.91 eV (red light), but the a-C film yielded only the band at -1.91 eV. These optical emissions are intrinsic and extrinsic to the a-C:N film and are sensitive to the content of nitrogen.
机译:使用90度弯曲磁过滤阴极电弧等离子体(FCAP)系统在硅上成功合成了非晶碳氮化物(a-C:N)膜。 ESC A分析表明N / C比达到1.08。已经对菱形碳公司的光致发光(PL)光谱进行了许多研究,但是很少讨论阴极发光(CL)光谱。这项工作使用300 K的CL光谱研究了a-C:N膜。这项工作显示了在1.5-3.5 eV下获得的a-C:N膜的CL光谱,并验证了可见区域中a-C:N膜的发光。 a-C:N薄膜的CL光谱中最突出的发光具有两个峰,中心在大约2.67 eV(蓝光)和-1.91 eV(红光),但是a-C薄膜仅在-1.91 eV处产生了能带。这些光发射是a-C:N膜的固有和非固有特性,并且对氮含量敏感。

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