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首页> 外文期刊>Diamond and Related Materials >Electro-deposition of adherent films of H~(-2)-free quality diamond-like carbon materials on SS-304 substrates using nanocrystalline SnO_2 interlayer
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Electro-deposition of adherent films of H~(-2)-free quality diamond-like carbon materials on SS-304 substrates using nanocrystalline SnO_2 interlayer

机译:纳米晶SnO_2中间层在SS-304衬底上电沉积无H〜(-2)优质类金刚石碳材料的粘附膜

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摘要

H~(-2)-free diamond-like carbon(DLC)films are deposited on bare as well as nanocrystalline SnO_2-coated stainless steel(SS)304 substrates.SnO_2 films are deposited by electrolysis of 10 mM SnCl_2 solution in nitric acid medium and then subsequently heating the sample in oxygen-ambient condition.The carbon films,on the other hand,are prepared by dissociative cleavage of methanol under high DC potential of 1 kV.Deposition conditions are optimised to get the best quality films,which are characterized by Raman spectroscopy,X-ray diffraction,X-ray photoelectron spectroscopy(XPS),and atomic force microscopy(AFM).It has been observed that films grown on SnO_2 interlayer are much more adherent when compared to those deposited on bare SS.Moreover,the quality of films on coated substrates is found to be much superior to those grown on bare SS.It is believed that the SnO_2 layer acts both as protective barrier against carbon diffusion into the SS substrate and also promotes nucleation due to anchorage of CH_3 and H+ radicals(necessary for growth of DLC film)onto its oxygen deficient sites.
机译:将无H〜(-2)的类金刚石碳(DLC)膜沉积在裸露的表面以及纳米晶SnO_2涂层的不锈钢(SS)304衬底上。通过在硝酸介质中电解10 mM SnCl_2溶液来沉积SnO_2膜。另一方面,通过在1 kV的高DC电位下甲醇解离裂解制备碳膜,并优化了沉积条件,以得到质量最好的膜,从而表征了碳膜。通过拉曼光谱,X射线衍射,X射线光电子能谱(XPS)和原子力显微镜(AFM)。已观察到,与在裸SS上沉积的膜相比,在SnO_2中间层上生长的膜的粘附性更高。 ,发现涂覆的基材上的膜质量要比裸SS上生长的膜质量要好得多。人们认为SnO_2层既可以作为防止碳扩散进入SS基材的保护性屏障,又可以促进由于酸化而形成的核。 CH_3和H +自由基(DLC膜生长所必需的)在其缺氧位点上的用量。

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