Diamond-graphite transformation induced by light ions implantation

摘要

Optical absorption, interference and microscopy studies of diamond samples implanted with light ions (H{sup}+, D{sup}+ and He{sup}+) and annealed at various regimes revealed new features of irradiation-induced graphitisation of diamond: 'low temperature' graphitisation related to vacancies and the specific mechanism of graphitisation accompanied by blistering in H+ -implanted samples. Migration of radiation damage is discussed in relation to the stability of the graphitised layers.