An under-gate triode structure field emission display with carbon nanotube emitters

摘要

A new triode structure for field emission displays based on carbon nanotube emitters is demonstrated. In this structure, gate electrodes are located underneath the cathode electrodes with an in-between insulating layer, a so-called under-gate type triode structure. Although the gate is on the opposite side of the anode with respect to the cathode electrodes, modulation of electron emission from the carbon nanotube emitters by the gate voltage is confirmed. The simple structure and fabrication process may lead to practical applications for the under-gate triode type structure.