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High-current electron emission characteristics of cathodes based on diamond films

机译:金刚石薄膜阴极的高电流电子发射特性

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摘要

Using different gas source, four types of diamond thin films were prepared on silicon substrate by microwave plasma chemical vapor deposition (MPCVD) technology, and characterized in detail through scanning electron microscopy (SEM), Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. High-current pulsed emission characteristics, tested with a 2 MeV line-inducing injector, showed that all of CVD diamond films had high emission current density (> 70 A/cm~2) and [ 100] textured B-doped microcrystalline diamond film possessed the largest emission current density of 115.1 A/cm~2. No obvious bright light and luminescent zones from side view CCD images indicated a possible pure field-emission mechanism of these diamond cathodes. Simultaneously, large decrease in the electron emission capability, above 15%, could be observed after several pulsed measurements, but this decrease could be completely recovered through the treatment of surface re-hydrogenation for emitted diamond cathodes, suggesting that emission performance of CVD diamond cathodes was closely relevant to hydrogen coverage ratio. The present data indicated that as-deposited CVD diamond films could be a potential candidate as cold cathode for the application in high-current electron emission field.
机译:利用不同的气体源,通过微波等离子体化学气相沉积(MPCVD)技术在硅衬底上制备了四种类型的金刚石薄膜,并通过扫描电子显微镜(SEM),拉曼光谱和傅立叶变换红外光谱(FTIR)进行了详细表征。用2 MeV感应线注入器测试的高电流脉冲发射特性表明,所有CVD金刚石膜都具有高发射电流密度(> 70 A / cm〜2),并且具有[100]织构化的B掺杂微晶金刚石膜。最大发射电流密度为115.1 A / cm〜2。侧视图CCD图像没有明显的亮光和发光区域,表明这些金刚石阴极可能是纯场发射机制。同时,经过几次脉冲测量,可以观察到电子发射能力大大降低,超过15%,但是这种降低可以通过对发射的金刚石阴极进行表面再氢化处理而完全恢复,这表明CVD金刚石阴极的发射性能与氢的覆盖率密切相关。目前的数据表明,沉积的CVD金刚石膜可能是冷阴极的潜在候选材料,可用于高电流电子发射领域。

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