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首页> 外文期刊>Zeitschrift fur Anorganische und Allgemeine Chemie >Synthesis and Characterization of the Rubidium Thiophosphate Rb-6(PS5)(P2S10) and the Rubidium Silver Thiophosphates Rb2AgPS4, RbAg5(PS4)(2) and Rb3Ag9(PS4)(4)
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Synthesis and Characterization of the Rubidium Thiophosphate Rb-6(PS5)(P2S10) and the Rubidium Silver Thiophosphates Rb2AgPS4, RbAg5(PS4)(2) and Rb3Ag9(PS4)(4)

机译:硫代磷酸phosphate Rb-6(PS5)(P2S10)和硫代磷酸Silver银Rb2AgPS4,RbAg5(PS4)(2)和Rb3Ag9(PS4)(4)的合成与表征

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摘要

The metal thiophosphates Rb2AgPS4 (2), RbAg5(PS4)(2) (3), and Rb3Ag9(PS4)(4) (4) were synthesized by stoichiometric reactions, whereas Rb-6(PS5)(P2S10) (1) was prepared with excess amount of sulfur. The compounds crystallize as follows: 1 monoclinic, P2(1)/c (no. 14), a = 17.0123(7) angstrom, b = 6.9102(2) angstrom, c = 23.179(1) angstrom, = 94.399(4)degrees; 2 triclinic, P(no. 2), a = 6.600(1) angstrom, b = 6.856(1) angstrom, c = 10.943(3) angstrom, = 95.150(2)degrees, = 107.338(2)degrees, = 111.383(2)degrees; 3 orthorhombic, Pbca (no. 61), a = 12.607(1) angstrom, b = 12.612(1) angstrom, c = 17.759(2) angstrom; 4 orthorhombic, Pbcm (no. 57), a = 6.3481(2) angstrom, b = 12.5782(4) angstrom, c = 35.975(1) angstrom. The crystal structures contain discrete units, chains, and 3D polyanionic frameworks composed of PS4 tetrahedral units arranged and connected in different manner. Compounds 1-3 melt congruently, whereas incongruent melting behavior was observed for compound 4. 1-4 are semiconductors with bandgaps between 2.3 and 2.6 eV and thermally stable up to 450 degrees C in an inert atmosphere.
机译:金属硫代磷酸盐Rb2AgPS4(2),RbAg5(PS4)(2)(3)和Rb3Ag9(PS4)(4)(4)通过化学计量反应合成,而Rb-6(PS5)(P2S10)(1)为用过量的硫制备。化合物的结晶如下:1单斜晶系,P2(1)/ c(第14号),a = 17.0123(7)埃,b = 6.9102(2)埃,c = 23.179(1)埃,= 94.399(4)度; 2三斜度,P(2号),a = 6.600(1)埃,b = 6.856(1)埃,c = 10.943(3)埃,= 95.150(2)度,= 107.338(2)度,= 111.383 (2)度; 3斜方晶,Pbca(编号61),a = 12.607(1)埃,b = 12.612(1)埃,c = 17.759(2)埃; 4斜方晶,Pbcm(第57号),a = 6.3481(2)埃,b = 12.5782(4)埃,c = 35.975(1)埃。晶体结构包含离散的单元,链和由以不同方式排列和连接的PS4四面体单元组成的3D聚阴离子骨架。化合物1-3会完全熔融,而化合物4的熔融行为却不一致。1-4是带隙介于2.3和2.6 eV之间的半导体,在惰性气氛中在高达450摄氏度的温度下具有热稳定性。

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