Influence of curved interfaces of phase change on the radial segregation of crystal growth

摘要

THE radial uniformity of components is an important parameter for crystal growth of a semiconductor of binary alloy. Radial segregation may be influenced by many factors, such as the convection, curved solidification interface, curved melting interface and others. The influence of each factor is often interpreted by analytical solutions of simplified models. However, the coupling process of more complete problems should be studied by the numerical method.