首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Selective deposition of semiconducting single-walled carbon nanotubes onto amino-silane modified indium tin-oxide surface for the development of poly(3-hexylthiophene)/ carbon-nanotube photovoltaic heterojunctions
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Selective deposition of semiconducting single-walled carbon nanotubes onto amino-silane modified indium tin-oxide surface for the development of poly(3-hexylthiophene)/ carbon-nanotube photovoltaic heterojunctions

机译:将半导体单壁碳纳米管选择性沉积到氨基硅烷改性的铟锡氧化物表面上,以开发聚(3-己基噻吩)/碳纳米管光伏异质结

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摘要

A method is described to obtain separation of single-walled carbon nanotubes (SWCNTs) on an indium tin-oxide (ITO) substrate by modifying the conducting surface of ITO with amino-silane functional groups. Scanning electron microscopy confirmed that the amino-silane functionalization of the substrate is a critical parameter for the immobilization of separated nanotubes. In particular spin coating the SWCNT solution onto the amino-silane modified ITO surface results in a lower nanotube density with respect to the reference sample obtained on pure ITO together with the immobilization of semiconducting carbon nanotubes onto the substrate. The possibility of using these SWCNT thin films to obtain poly-meranotube heterojunctions for the development of organic solar cells is considered.
机译:描述了一种方法,该方法通过用氨基硅烷官能团修饰ITO的导电表面来在铟锡氧化物(ITO)基板上分离单壁碳纳米管(SWCNT)。扫描电子显微镜证实,底物的氨基硅烷官能化是固定分离的纳米管的关键参数。特别是将SWCNT溶液旋涂到氨基硅烷改性的ITO表面上,相对于在纯ITO上获得的参考样品,纳米管密度降低,并且半导体碳纳米管固定在基板上。考虑了使用这些SWCNT薄膜获得用于开发有机太阳能电池的聚合物/纳米管异质结的可能性。

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