Thin films of silylated graphite oxide were obtained from a chloroform/cyclohexane dispersion of n-hexadecylamine-intercalated silylated graphite oxide by a casting method at a low temperature. Carbon-based thin films were obtained from the pyrolysis of the resulting films under a reduced pressure at 500 °C or higher temperatures. The resulting samples were well adhered to the substrate because of the presence of silicon containing species as a "glue". The resistivity decreased with an increase in the film thickness or a decrease in the transparency. Based on the data obtained for the samples prepared from graphite with different particle sizes and graphite oxide with different oxygen contents, the conduction of the electrons within each carbon sheet seemed important for large film thickness and conduction through the boundary seemed important when the film thickness was small. A low sheet resistance of 3.7 kn/sq for 80% of transmittance'was achieved, when graphite oxide with a lower oxygen content was prepared from graphite with smaller particle sizes and the precursor film was heated at 500 °C. At 9oo °C, it further decreased to a value of 700 Ω /sq.
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