首页> 外文期刊>Tsvetnye Metally: The Soviet Journal of Non-Ferrous Metals >DETERMINING THE PARAMETERS OF A DYNAMIC MODEL FOR THE GROWTH OF SEMICONDUCTOR SILICON CRYSTALS
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DETERMINING THE PARAMETERS OF A DYNAMIC MODEL FOR THE GROWTH OF SEMICONDUCTOR SILICON CRYSTALS

机译:确定半导体硅晶体生长动力学模型的参数

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Modern technological units used to grow silicon monocrystals have been equipped with SAU [Automatic Control System] which includes microcomputers. A basic function of the SAU is to stabilize the geometric characteristics of crystals. This task is rather complex because the item under control is unstable, unstationary and has a non-minimal phase. The SAU exercises multichannel control with a PID-law in each regulating circuit; the parameters for the multichannel regulator will not change over the course of the entire growth process even though it is evident that automatic fine tuning would have a favorable effect on the control quality. By introducing a microcomputer to me SAU, improvements can be made in the quality of crystal shape-formation because more effective control methods are available which are based on processing empirical data covering process parameters. Intensifying the parameters under normal conditions can be useful both for technologists as well as when production is being automated.
机译:用于生长单晶硅的现代技术单元已经配备了SAU [自动控制系统],其中包括微型计算机。 SAU的基本功能是稳定晶体的几何特性。该任务相当复杂,因为受控制的项目不稳定,不稳定并且具有非最小相位。 SAU通过每个调节电路中的PID规则进行多通道控制;即使很明显,自动微调将对控制质量产生有利影响,但多通道调节器的参数在整个增长过程中都不会改变。通过向我的SAU引入微型计算机,可以改善晶体形状形成的质量,因为可以使用更有效的控制方法,该方法基于处理过程参数的经验数据。在正常条件下增强参数对于技术人员以及自动化生产都可能有用。

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