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Generation of electron-beam produced plasmas and applications to surface modification

机译:电子束产生的等离子体的产生及其在表面改性中的应用

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NRL has developed a number of hollow cathodes to generate sheets of electrons culminating in a 'Large Area Plasma Processing System' (LAPPS) based on the, electron-beam ionization process. Beam ionization is fairly independent of gas composition and produces low temperature plasma electrons (<0.5 eV in molecular gases) in high densities (10(9)-10(12) cm(-3)). The present system consists of a pulsed planar plasma distribution generated by a magnetically collimated sheet of 2 kV electrons (<1 mA/cm(2)) injected into a neutral background of processing gases (oxygen, nitrogen, sulfur hexafluoride, argon). Operating pressures range from 2-13 Pa with 150-165 Gauss magnetic fields for a highly localized plasma density of similar to10(11) cm(-3). This plasma source demonstrated anisotropic removal rates of polymeric (photoresist) material and silicon with 0, and Ar/O-2/SF6 mixtures, respectively In pure nitrogen, this same source showed a surface nitriding rate of similar to1 mum/h of plasma exposure time on austenitic stainless steel at 400 T. Time-resolved in situ plasma diagnostics (Langmuir probes and mass spectrometry) of these pulsed plasmas are also shown to illustrate the general plasma characteristics. (C) 2003 Elsevier B.V. All rights reserved. [References: 11]
机译:NRL开发了许多空心阴极,以基于电子束电离过程在“大面积等离子体处理系统”(LAPPS)中最终产生电子片。束离子化完全独立于气体成分,并以高密度(10(9)-10(12)cm(-3))产生低温等离子体电子(分子气体中<0.5 eV)。本系统由脉冲平面等离子体分布组成,该分布是由2 kV电子(<1 mA / cm(2))的磁准直薄板产生的,该薄层注入到处理气体(氧气,氮气,六氟化硫,氩气)的中性背景中。工作压力范围为2-13 Pa,具有150-165高斯磁场,高度局部等离子体密度类似于10(11)cm(-3)。该等离子源分别显示了聚合(光致抗蚀剂)材料和硅与0和Ar / O-2 / SF6混合物的各向异性去除速率。时间在奥氏体不锈钢上以400 T进行时间分析。还显示了这些脉冲等离子体的时间分辨原位等离子体诊断(Langmuir探针和质谱),以说明一般的等离子体特性。 (C)2003 Elsevier B.V.保留所有权利。 [参考:11]

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