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Nucleation and growth of diamond films on molybdenum

机译:钼上金刚石膜的成核与生长

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摘要

The nucleation and growth of diamond films on molybdenum were investigated by scanning electron microscopy and Raman spectroscopy. Diamond films were deposited by hot-filament chemical vapor deposition via electron emission-enhanced nucleation, in which a dc negative voltage relative to the filament was applied to a tungsten electrode that was previously coated with diamond, by chemical vapor deposition. The electrode-to-substrate distance was one of the deposition variables. The maximum value of the nucleation density was found to be up to 10{sup}11 cm{sup}(-2) on a pristine Mo surface by electron emission-enhanced nucleation. Electron emission-enhanced nucleation also greatly improved the quality and adhesion of diamond films on a Mo substrate.
机译:通过扫描电子显微镜和拉曼光谱研究了钼上金刚石膜的形核和生长。金刚石薄膜通过热丝化学气相沉积和电子发射增强形核沉积而成,其中通过化学气相沉积将相对于灯丝的dc负电压施加到预先涂有金刚石的钨电极上。电极到基板的距离是沉积变量之一。通过电子发射增强的成核作用,在原始的Mo表面发现成核密度的最大值高达10 {sup} 11 cm {sup}(-2)。电子发射增强的成核作用还大大改善了Mo衬底上金刚石膜的质量和附着力。

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