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Plasma diagnostics of pulsed d.c. glow discharge combined with ICP for deep nitriding process

机译:脉冲直流电的等离子体诊断辉光放电与ICP结合用于深氮化工艺

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摘要

A deep nitriding system was designed to increase the plasma density using dual plasma source and consisted of a pulsed d.c. and r.f. (13.56 MHz). A pulsed d.c. glow discharge combined with inductively coupled plasma (ICP) has been characterized by optical emission spectroscopy (OES) in the r.f. power range of 400-1000 W and pressure between 400 and 800 Pa. For the nitrided AISI 4140 steel at a r.f. power of 900 W, pressure of 700 Pa and cathode voltage of -550 V, the case hardening depth is approximately 1.6 times deeper than that obtained without ICP and the compound layer is slightly thickened as the r.f. power is increased. The increasing trends of normalized intensities of N-2 (337.1 nm) and N-2(+) (393.4 nm) are similar as the increasing trend of the nitriding case depth with r.f. power. The roles of ICP to enlarge the nitriding depth will be discussed. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 15]
机译:设计了深氮化系统,以使用双等离子体源增加等离子体密度,该系统由脉冲直流电组成。和r.f. (13.56 MHz)。脉冲直流电射频中结合了电感耦合等离子体(ICP)的辉光放电已经通过光学发射光谱(OES)进行了表征。功率范围为400-1000 W,压力在400和800 Pa之间。对于氮化铝AISI 4140钢,在r.f.功率为900 W,压力为700 Pa,阴极电压为-550 V,表面硬化深度约为没有ICP时的硬化深度的1.6倍,化合物层随着r.f的增加而略微增厚。功率增加。 N-2(337.1 nm)和N-2(+)(393.4 nm)归一化强度的增加趋势与渗氮深度随r.f的增加趋势相似。功率。将讨论ICP在扩大氮化深度方面的作用。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:15]

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