首页> 外文期刊>The Physics of Metals and Metallography >Calculation of the Electronic Structure of the Vanadium Dioxide VO_2 in the Monoclinic Low-Temperature Phase M_1 Using the Generalized Transition State Method
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Calculation of the Electronic Structure of the Vanadium Dioxide VO_2 in the Monoclinic Low-Temperature Phase M_1 Using the Generalized Transition State Method

机译:用广义跃迁态方法计算单斜低温相M_1中二氧化钒VO_2的电子结构

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摘要

It is known that the ground state of the vanadium dioxide in the low-temperature monoclinic phase M_1 is a nonmagnetic insulator. The calculations in the local-density approximation (LDA) predict the metallic nonmagnetic state, whereas the calculations in terms of the LDA + U approach (local-density approximation with explicit allowance for on-site Coulomb correlations V) predict the insulating antiferromagnetic state. In terms of the method of generalized transition state, the nonmagnetic insulating state of VO_2 in the M_1 phase with a band gap of 0.3 eV has been reproduced for the first time.
机译:已知低温单斜晶相M_1中的二氧化钒的基态是非磁性绝缘体。局部密度近似(LDA)的计算可预测金属的非磁性状态,而LDA + U方法(局部密度近似并具有针对库仑相关性V的明确允许值)的计算可预测绝缘反铁磁状态。根据广义跃迁状态的方法,带隙为0.3 eV的M_1相中VO_2的非磁性绝缘状态已被首次再现。

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