首页> 外文期刊>The journal of physics and chemistry of solids >One-step synthesis of pure Cu nanowire/carbon nanotube coaxial nanocables with different structures by arc discharge
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One-step synthesis of pure Cu nanowire/carbon nanotube coaxial nanocables with different structures by arc discharge

机译:电弧放电一步法合成不同结构的纯铜纳米线/碳纳米管同轴纳米电缆

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摘要

Pure Cu nanowire/carbon nanotube (Cu@C) coaxial nanocables are one-step fabricated by arc discharge. The microstructure and morphology of the Cu@C nanocables are investigated via X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM). XRD results reveal that the copper carbide nano-crystals were formed in the nanocables and it plays an important role in the growth of the Cu@C nanocables. As-prepared Cu@C nanocables exhibit three different structures, including well-filled Cu@C nanocables, symmetrically trifurcate Cu@C nanocables, and twice capsulated Cu@C nanocables. The fabrication of Cu@C nanocables with different structures offers more opportunities for the development of nanoelectronic devices. The formation mechanisms of Cu@C nanocables with different structures are discussed as well.
机译:纯铜纳米线/碳纳米管(Cu @ C)同轴纳米电缆是通过电弧放电一步一步制造的。通过X射线衍射(XRD),扫描电子显微镜(SEM)和高分辨率透射电子显微镜(HRTEM)研究了Cu @ C纳米电缆的微观结构和形态。 XRD结果表明,在纳米电缆中形成了碳化铜纳米晶体,并在Cu @ C纳米电缆的生长中起着重要作用。制备后的Cu @ C纳米电缆具有三种不同的结构,包括填充良好的Cu @ C纳米电缆,对称的三叉状Cu @ C纳米电缆和两次封装的Cu @ C纳米电缆。具有不同结构的Cu @ C纳米电缆的制造为纳米电子器件的开发提供了更多的机会。讨论了具有不同结构的Cu @ C纳米电缆的形成机理。

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