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Sulfide Treatment of ZnO Single Crystals and Nanorods and the Effect on P3HT-ZnO Photovoltaic Device Properties

机译:硫化物处理ZnO单晶和纳米棒及其对P3HT-ZnO光伏器件性能的影响

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摘要

Surface chemical changes or passivation can be used to enhance the electrical performance of device structures. The solution-based (NH4)2S_x treatment of ZnO single crystals of (0001), (1010), and (0001) orientations as well as ZnO nanorods was studied by using X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). The (1010) and (0001)-oriented single crystals and ZnO nanorods each showed evidence that the ZnO was consumed, forming a ZnS layer at the surface. In contrast, the ZnO (0001) crystal did not substantially react with the sulfide solution. However, the surface hydroxyl species were displaced by a sulfide passivation layer of 0.21 ML. This process resulted in an apparent increase in upward band bending by ~0.1-0.3 eV. P3HT-ZnO photovoltaic devices fabricated on O-polar single crystals showed electrical properties which can be correlated with ZnS formation due to the sulfide treatment.
机译:表面化学变化或钝化可用于增强器件结构的电性能。利用X射线和紫外光电子能谱法(XPS和UPS)研究了以溶液为基础(NH4)2S_x处理(0001),(1010)和(0001)方向的ZnO单晶以及ZnO纳米棒。 (1010)和(0001)取向的单晶和ZnO纳米棒均显示ZnO被消耗的证据,从而在表面形成了ZnS层。相反,ZnO(0001)晶体基本上不与硫化物溶液反应。但是,表面羟基物质被0.21 ML的硫化物钝化层所取代。这个过程导致向上的弯曲带明显增加了〜0.1-0.3 eV。在O极单晶上制造的P3HT-ZnO光伏器件显示出可通过硫化处理而与ZnS形成相关的电性能。

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