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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Synthesis and Growth Mechanism of Quasialigned Ultrafine ZnS Nanowire Arrays Fabricated Directly on Zinc Foils
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Synthesis and Growth Mechanism of Quasialigned Ultrafine ZnS Nanowire Arrays Fabricated Directly on Zinc Foils

机译:直接在锌箔上制备准取向超细ZnS纳米线阵列的合成及生长机理

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摘要

Quasialigned ZnS nanowire arrays have been synthesized directly on zinc substrates via a simple and mild one-step solvothermal method. The morphology, structure, and composition of the synthesized materials are evaluated by scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. These ultrafine nanowire arrays fabricated directly on a zinc foil have diameters of 5—15 nm and grow along the [001] direction. The influence of the reaction time, temperature, and solvent on the morphology and composition of the products is investigated systematically and the growth mechanism of the ultrafine nanowire arrays is proposed. This growth model may enable better design and assembly of other chalcogenide nanowire arrays on the appropriate metal substrates for nanodevice applications.
机译:准对准的ZnS纳米线阵列已通过简单且温和的一步溶剂热法直接在锌基板上合成。通过扫描电子显微镜,透射电子显微镜,高分辨率透射电子显微镜,X射线衍射,能量色散X射线光谱和X射线光电子光谱来评价合成材料的形态,结构和组成。直接在锌箔上制造的这些超细纳米线阵列的直径为5-15 nm,并沿[001]方向生长。系统地研究了反应时间,温度和溶剂对产物形貌和组成的影响,并提出了超细纳米线阵列的生长机理。该生长模型可以使其他硫族化物纳米线阵列能够​​更好地设计和组装在适当的金属基板上,以用于纳米器件应用。

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