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THERMALLY STIMULATED DESORPTION OF NEUTRAL CF3 FROM CF3I ON AG(111)

机译:AG(111)上CF3I对中性CF3的热激发脱附

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The low temperature thermal chemistry of CF3I on Ag (111) presents an example of competing reaction pathways; molecular desorption vs desorption of radical CF3. Temperature programmed desorption and angle resolved temperature programmed desorption, complemented with Auger electron spectroscopy and low energy electron diffraction, were used to discern the mechanism of the CF3 radical desorption channel. CF3 desorption is limited to the first monolayer of CF3I; 0.75 ML CF3I is the coverage used for angular dependence measurements. At 90 K most of the CF3I adsorbs molecularly to the metal, but also present under these conditions are dissociative adsorption and thermal decomposition channels limited to C-I bond cleavage. The decomposition product, CF3, desorbs as a radical at high temperatures (similar to 320 K) with the I remaining on the surface until 850 K. At submonolayer CF3I coverages, thermal activation produces a low temperature (100-150 K) radical desorption channel. Results indicate that low temperature CF3 thermal desorption occurs via dissociative electron attachment to molecular CF3I, yielding radical CF3 and adsorbed iodine. (C) 1996 American Institute of Physics. [References: 46]
机译:CF3I在Ag(111)上的低温热化学反应是竞争反应途径的一个例子。分子解吸与自由基CF3的解吸通过程序升温脱附和角分辨程序升温脱附,并结合俄歇电子能谱和低能电子衍射,来识别CF3自由基脱附通道的机理。 CF3解吸仅限于CF3I的第一个单层; 0.75 ML CF3I是用于角度依赖性测量的范围。在90 K时,大多数CF3I分子吸附在金属上,但在这些条件下也存在解离吸附和热分解通道,这些通道仅限于C-1键断裂。分解产物CF3在高温(类似于320 K)下作为自由基解吸,而I保留在表面上直至850K。在亚单层CF3I覆盖下,热活化产生低温(100-150 K)自由基解吸通道。结果表明,低温CF3的热脱附是通过电子与分子CF3I的解离附着而产生的,从而产生自由基CF3和吸附的碘。 (C)1996年美国物理研究所。 [参考:46]

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