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Determination of cross over effects in lattice models from the local height difference distribution

机译:从局部高度差分布确定晶格模型中的交叉效应

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Growth of interfaces during vapor deposition is analyzed on a discrete lattice. It leads to finding distribution of local heights, measurable for any lattice model. Invariance in the change of this distribution in time is used to determine the cross over effects in various models. The analysis is applied to the discrete linear growth equation and Kardar-Parisi-Zhang (KPZ) equation. A new model is devised that shows early convergence to the KPZ dynamics. Various known conservative and non conservative models are tested on a one dimensional substrate by comparing the growth results with the exact KPZ and linear growth equation results. The comparison helps in establishing the condition that determines the presence of cross over effect for the given model. The new model is used in (2+1) dimensions to predict close to the true value of roughness constant for KPZ equation.
机译:在离散晶格上分析气相沉积期间界面的生长。它导致找到局部高度的分布,可以对任何晶格模型进行测量。该分布随时间变化的不变性用于确定各种模型中的交叉效应。该分析适用于离散线性增长方程和Kardar-Parisi-Zhang(KPZ)方程。设计了一个新模型,该模型显示了KPZ动态的早期收敛。通过将生长结果与精确的KPZ和线性生长方程式结果进行比较,可以在一维基底上测试各种已知的保守和非保守模型。该比较有助于确定确定给定模型存在交叉效应的条件。新模型用于(2 + 1)维中,以预测接近KPZ方程的粗糙度常数的真实值。

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