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Magnetic spin excitations in Mn doped GaAs: A model study

机译:锰掺杂GaAs中的磁自旋激发:模型研究

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摘要

We provide a quantitative theoretical model study of the dynamical magnetic properties of optimally annealed Ga_(1-x) Mn _x As. This model has already been shown to reproduce accurately the Curie temperatures for Ga_(1-x) Mn _x As. Here we show that the calculated spin stiffness are in excellent agreement with those which were obtained from ab-initio based studies. In addition, an overall good agreement is also found with available experimental data. We have also evaluated the magnon density of states and the typical density of states from which the"mobility edge", separating the extended from localized magnon states, was determined. The power of the model lies in its ability to be generalized for a broad class of diluted magnetic semiconductor materials, thus it bridges the gap between first principle calculations and model based studies.
机译:我们提供了最佳退火Ga_(1-x)Mn _x As的动态磁性能的定量理论模型研究。已经表明该模型可以精确地再现Ga_(1-x)Mn _x As的居里温度。在这里,我们表明,计算的自旋刚度与从基于ab-initio的研究获得的自旋刚度非常吻合。此外,在现有的实验数据上也发现了总体良好的一致性。我们还评估了状态的磁振子密度和确定了“运动边缘”的典型状态密度,该“迁移率边缘”将扩展的磁振子状态与局部的磁振子状态分开。该模型的强大之处在于它能够针对多种稀释的磁性半导体材料进行通用化,因此它弥合了第一性原理计算与基于模型的研究之间的差距。

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