High-performance n-Type Organic Field-effect Transistors Based on Co-oligomers Containing a Trifluoromethylphenylthiazolyl Group and a Biphenylene Core

摘要

New co-oligomers containing trifluoromethylphenylthiazolyl and phenylene units were prepared. The derivative with thia-zolyl and biphenyl units showed high-performance n-type FET behavior.