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首页> 外文期刊>The European physical journal, D. Atomic, molecular, and optical physics >Note on electron impact excitation for transition 2s~2 ~1S_0-2s2p ~3P_1 of Be-like isoelectronic sequence
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Note on electron impact excitation for transition 2s~2 ~1S_0-2s2p ~3P_1 of Be-like isoelectronic sequence

机译:关于类Be等电子序列的跃迁2s〜2〜1S_0-2s2p〜3P_1的电子冲击激发的注意事项

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Relativistic distorted-wave method was used to calculate the electron impact excitation collision strengths for transitions 2s~2 ~1S_0-2s2p ~3P_1 of Be-like isoelectronic ions. The target states were described, respectively, by 10-level, 46-level and 133-level MCDF configuration-expansion. The relativistic continuum orbitals were calculated in the potential field of frozen target-ion charge distribution with semi-classical exchange potential. The influence of the target states on this collision process along the isoelectronic sequence was investigated in the above three MCDF configuration-expansion modes. It was found that the configurations in the n = 3 and the n = 4 complexes have great influence on both the high and the low Z ions but the influence is relatively small for intermediate Z ions. The latter phenomenon was attributed to competition between opposing correlation and relativistic effects on the collision strengths.
机译:采用相对论畸变波法计算了类Be电子离子跃迁2s〜2〜1S_0-2s2p〜3P_1的电子碰撞激发碰撞强度。通过10级,46级和133级MCDF配置扩展分别描述了目标状态。在具有半经典交换势的冻结目标离子电荷分布的势场中,计算了相对论连续谱轨道。在上述三种MCDF构型-扩展模式下,研究了目标态沿等电序列对该碰撞过程的影响。已发现,n = 3和n = 4配合物中的构型对高Z离子和低Z离子都有很大的影响,但对中间Z离子的影响相对较小。后一种现象归因于相对相关性和相对论对碰撞强度的影响之间的竞争。

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